司坦森集成电路深圳有限公司
STN4488L N Channel Enhancement Mode MOSFET 20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright ? 2007, Stanson Corp. STN4488L 2009. V1 DEscriptION STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN ConFIGURATION SOP-8 PART MARKING SOP-8 Y:Year Code A: Week Code M: Process Code FEATURE 30V/20A, RDS(ON) = 3.8m? (Typ.) @VGS = 10V 30V/18A, RDS(ON) = 5.2m? @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design STN4488L N Channel Enhancement Mode MOSFET 20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright ? 2007, Stanson Corp. STN4488L 2009. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol 10 Sec Steady state Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ ID 20 15 A 17 12 Pulsed Drain Current IDM 80 A Continuous Source Current (Diode Conduction) IS 3.0 A Power Dissipation TA=25℃ TA=70℃ PD 3.1 1.7 W 20 1.1 Operation Junction Temperature TJ -55/150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA Typ Max ℃/W 59 75 STN4488L N Channel Enhancement Mode MOSFET 20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright ? 2007, Stanson Corp. STN4488L 2009. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 30 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 1.0 2.5 V Gate Leakage Current IGSS VDS=0V,VGS=±20V ±10 nA Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V 1 uA TJ=55℃ 5 On-State Drain Current ID(on) VDS=5V,VGS=10V 80 A Drain-source On-Resistance RDS(on) VGS=10V, ID=20A 3.8 4.6 TJ=125°C 5.3 6.5 mΩ VGS=4.5V, ID=18A 5.2 6.4 Forward Tran Conductance gfs VDS=10V,ID=20A 72 S Diode Forward Voltage VSD IS=8.0A,VGS=0V 1.0 V Dynamic Total Gate Charge Qg VDS=15V,VGS=10V ID=20A 84 112 Gate-Source Charge Q nC gs 12 Gate-Drain Charge Qgd 21 Input Capacitance Ciss VDS=15V,VGS=0V f=1MHz 5450 6800 pF Output Capacitance Coss 760 Reverse TransferCapacitance Crss 540 Turn-On Time td(on) VDS=15V,RL=0.75Ω ID=1A,VG=10V RG=3.0Ω 13 nS tr 9.8 Turn-Off Time td(off) 49 tf 16 STN4488L N Channel Enhancement Mode MOSFET 20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright ? 2007, Stanson Corp. STN4488L 2009. V1 TYPICAL CHARACTERICTICS STN4488L N Channel Enhancement Mode MOSFET 20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright ? 2007, Stanson Corp. STN4488L 2009. V1 TYPICAL CHARACTERICTICS STN4488L N Channel Enhancement Mode MOSFET 20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright ? 2007, Stanson Corp. STN4488L 2009. V1 STN4488L N Channel Enhancement Mode MOSFET 20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright ? 2007, Stanson Corp. STN4488L 2009. V1 SOP-8 PACKAGE OUTLINE STN4488L N Channel Enhancement Mode MOSFET 20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright ? 2007, Stanson Corp. STN4488L 2009. V1 DEscriptION STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN ConFIGURATION SOP-8 PART MARKING SOP-8 Y:Year Code A: Week Code M: Process Code FEATURE 30V/20A, RDS(ON) = 3.8m? (Typ.) @VGS = 10V 30V/18A, RDS(ON) = 5.2m? @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design STN4488L N Channel Enhancement Mode MOSFET 20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright ? 2007, Stanson Corp. STN4488L 2009. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol 10 Sec Steady state Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ ID 20 15 A 17 12 Pulsed Drain Current IDM 80 A Continuous Source Current (Diode Conduction) IS 3.0 A Power Dissipation TA=25℃ TA=70℃ PD 3.1 1.7 W 20 1.1 Operation Junction Temperature TJ -55/150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA Typ Max ℃/W 59 75 STN4488L N Channel Enhancement Mode MOSFET 20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright ? 2007, Stanson Corp. STN4488L 2009. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 30 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 1.0 2.5 V Gate Leakage Current IGSS VDS=0V,VGS=±20V ±10 nA Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V 1 uA TJ=55℃ 5 On-State Drain Current ID(on) VDS=5V,VGS=10V 80 A Drain-source On-Resistance RDS(on) VGS=10V, ID=20A 3.8 4.6 TJ=125°C 5.3 6.5 mΩ VGS=4.5V, ID=18A 5.2 6.4 Forward Tran Conductance gfs VDS=10V,ID=20A 72 S Diode Forward Voltage VSD IS=8.0A,VGS=0V 1.0 V Dynamic Total Gate Charge Qg VDS=15V,VGS=10V ID=20A 84 112 Gate-Source Charge Q nC gs 12 Gate-Drain Charge Qgd 21 Input Capacitance Ciss VDS=15V,VGS=0V f=1MHz 5450 6800 pF Output Capacitance Coss 760 Reverse TransferCapacitance Crss 540 Turn-On Time td(on) VDS=15V,RL=0.75Ω ID=1A,VG=10V RG=3.0Ω 13 nS tr 9.8 Turn-Off Time td(off) 49 tf 16 STN4488L N Channel Enhancement Mode MOSFET 20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright ? 2007, Stanson Corp. STN4488L 2009. V1 TYPICAL CHARACTERICTICS STN4488L N Channel Enhancement Mode MOSFET 20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright ? 2007, Stanson Corp. STN4488L 2009. V1 TYPICAL CHARACTERICTICS STN4488L N Channel Enhancement Mode MOSFET 20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright ? 2007, Stanson Corp. STN4488L 2009. V1 STN4488L N Channel Enhancement Mode MOSFET 20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright ? 2007, Stanson Corp. STN4488L 2009. V1 SOP-8 PACKAGE OUTLINE STN4488L N Channel Enhancement Mode MOSFET 20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright ? 2007, Stanson Corp. STN4488L 2009. V1 DEscriptION STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN ConFIGURATION SOP-8 PART MARKING SOP-8 Y:Year Code A: Week Code M: Process Code FEATURE 30V/20A, RDS(ON) = 3.8m? (Typ.) @VGS = 10V 30V/18A, RDS(ON) = 5.2m? @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design STN4488L N Channel Enhancement Mode MOSFET 20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright ? 2007, Stanson Corp. STN4488L 2009. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol 10 Sec Steady state Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ ID 20 15 A 17 12 Pulsed Drain Current IDM 80 A Continuous Source Current (Diode Conduction) IS 3.0 A Power Dissipation TA=25℃ TA=70℃ PD 3.1 1.7 W 20 1.1 Operation Junction Temperature TJ -55/150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA Typ Max ℃/W 59 75 STN4488L N Channel Enhancement Mode MOSFET 20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright ? 2007, Stanson Corp. STN4488L 2009. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 30 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 1.0 2.5 V Gate Leakage Current IGSS VDS=0V,VGS=±20V ±10 nA Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V 1 uA TJ=55℃ 5 On-State Drain Current ID(on) VDS=5V,VGS=10V 80 A Drain-source On-Resistance RDS(on) VGS=10V, ID=20A 3.8 4.6 TJ=125°C 5.3 6.5 mΩ VGS=4.5V, ID=18A 5.2 6.4 Forward Tran Conductance gfs VDS=10V,ID=20A 72 S Diode Forward Voltage VSD IS=8.0A,VGS=0V 1.0 V Dynamic Total Gate Charge Qg VDS=15V,VGS=10V ID=20A 84 112 Gate-Source Charge Q nC gs 12 Gate-Drain Charge Qgd 21 Input Capacitance Ciss VDS=15V,VGS=0V f=1MHz 5450 6800 pF Output Capacitance Coss 760 Reverse TransferCapacitance Crss 540 Turn-On Time td(on) VDS=15V,RL=0.75Ω ID=1A,VG=10V RG=3.0Ω 13 nS tr 9.8 Turn-Off Time td(off) 49 tf 16 STN4488L N Channel Enhancement Mode MOSFET 20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright ? 2007, Stanson Corp. STN4488L 2009. V1 TYPICAL CHARACTERICTICS STN4488L N Channel Enhancement Mode MOSFET 20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright ? 2007, Stanson Corp. STN4488L 2009. V1 TYPICAL CHARACTERICTICS STN4488L N Channel Enhancement Mode MOSFET 20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright ? 2007, Stanson Corp. STN4488L 2009. V1 STN4488L N Channel Enhancement Mode MOSFET 20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright ? 2007, Stanson Corp. STN4488L 2009. V1 SOP-8 PACKAGE OUTLINE 台湾司坦森低压MOS管原厂厂家 司坦森集成电路（深圳）有限公司 www.stansontech.com 诚招代理分销商。 联系人：唐小姐 手机： QQ：41394445 邮箱：tang@stansontech.com 地址:深圳市福田区福明路雷圳大厦2605室 部分产品可代替ANPEC茂达、FAIRCHILD仙童、AOS、VISHAY威世,IR ,on 富鼎，松木 等 ST2300SRG可替代WNM2016 ST2301A可替代Si2301、AO3423、FDN302P、FDN342P、FDN338P、APM2313、APM2323、STM2309 ST2302替代Si2302、TN0200T、FDN339AN、FDN371N、FDN335N、APM2314、APM2324、SSM3K102TU ST2303替代Si2303、Si2307、Si2323、AO3405、AO3409、AO3421、FDN360P、FDN358P、FDN352AP ST2305可替代Si2305、FDN304P、APM2301、NTR4101PT1G、RTR030P02、IRLML6402 ST3400SRG替代NTR4170NT1G ST2341SRG替代AO3415、PPM3T20V6、SM2307PSA ST2300替代SI2312、AO3416 AO3420、AP2302AGN/PNMT20V06 ST2304替代Si2304 Si2306 AO3406 NDS355AN APM2306 ST2305A替代FDN306P、DMP2035U ST2400S23RG替代AO3400、AP2305AGN、IRFML8244 ST3401M替代AO3401、CES2307 ST3422A替代AO3422A、ZXMN6A07F、G2301A STN1810替代AO4886 STN4402替代Si4420 Si4882 Si4820 Si4894 AO4420 /4404B AO4422 AO4446 FDS6630A FDS6614A FDS6680 FDS6924 APM4820 IRF7413/AP4800AGM XZN4420 STP4407可替代AO4407、APM4315K STP4435A替代Si4431、Si4435、Si4425、AO4411、AO4415、FDS8435、FDS4435、FDS6675、AO4419、si9804 STN4438替代ME4436 STN4488L替代AO4728L、IRF7832、SI7898DP、AO4410 STC4606替代SI5504、AO4606 STC4614替代Si4567、AOS4614 STN4828替代Si4900、AO4828、STM6930/MDS5951 STN4920替代Si4920、AO4812 STP4953替代Si4953、AO4803、FDS8958、APM4953 ST9435替代Si9435、Si4431、AO4405、FDS9435、SSM9435GM ST16N10替代APM1110NUB、IRLR/U120NPbF、CEU12N10L ST13P10替代SFR9120、AM1A16PSU/UB、IRF9530 STN8882D替代SUD50N024、AOD452、FDD7030BL、LR3103、IRFR3707 产品广泛应用于计算机周边.MP3 MP4 DVB DVD,应用领域:蜂窝电话 ＬＣＤ显示器 ＬＣＤ ＴＶ 便携式ＤＶＤ 车载ＤＶＤ 笔记本电脑 ＰＤＡ，电源 稳压器 逆变器 高压条 适配器 数码相机 电子游戏机 电子玩具笔记本电脑电源管理、蓝牙接收器、耳机手携式产品、电子辞典、电子书、数字相框，智能家居，按摩器材，风扇电机，汽车LED灯，家用LED灯具等。 本公司主营：SOT-23,SOT-23-3L,SOP-8,TO-252,TO-251等产品，是优秀的电子产品公司，拥有优秀的高中层管理队伍，他们在技术开发、市场营销、金融财务分析等方面拥有丰富的管理经验，选择我们，值得你信赖！ 具体地址:广东省深圳市福田区福田区福明路雷圳大厦2605，联系人唐小姐。 联系电话： QQ：41394445
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