深圳市南山区嘉泰姆电子经营部
· FEATURES · Drain Current –ID= 7A@ TC=25℃ · Drain Source Voltage : VDSS= 600V(Min) · Static Drain-Source On-Resistance : R DS(on) = 1.0Ω (Max) · Avalanche Energy Specified · Fast Switching · Simple Drive Requirements · DESCRITION · Designed for high efficiency switch mode power supply. · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Plused 28 A PD Total Dissipation @TC=25℃ 125 W T j Max. Operating Junction Temperature 150 ℃ T stg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER ConDITIONS MIN MAX UNIT V (BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 600 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V R DS(on) Drain-Source On-Resistance VGS= 10V; ID= 3.5A 1.0 Ω IGSS Gate-Body Leakage Current VGS= ± 20V;VDS= 0 ± 100 nA IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 1 μ A VSD Forward On-Voltage I S= 7A; VGS= 0 1.8 V i.cn